PFP10N80A - N-Channel MOSFET

Key Features

 Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 27.5 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 1.15 Ω (Typ. ) @VGS=10V.

PFP10N80A n-channel mosfet by Wing On - Datasheet Preview

Datasheet Details

Part number	PFP10N80A
Manufacturer	Wing On
File Size	972.81 KB
Description	N-Channel MOSFET
Datasheet	PFP10N80A Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
PFP13N50	500V N-Channel MOSFET	Power Device
PFP18N50	500V N-Channel MOSFET	Power Device
PFP	DIN Rail Mounting Track	Omron Electronics
PFP3205	N-channel Power MOSFET	PowerGate
PFP4N60	N-channel MOSFET	PowerGate

Other Datasheets by Wing On

Part Number	Description
PFP10N80E	N-Channel MOSFET
PFP10N40	N-Channel MOSFET
PFP10N60	N-Channel MOSFET
PFP10N65	N-Channel MOSFET
PFP100N10S	N-Channel Super Junction MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

PFP10N80A / PFF10N80A FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 27.5 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 1.15 Ω (Typ.) @VGS=10V APPLICATION  High current, High speed switching  Suitable for power supplies, adaptors and PFC  SMPS (Switched Mode Power Supplies) PFP10N80A/PFF10N80A 750V N-Channel MOSFET BVDSS = 750 V RDS(on) = 1.15 Ω ID = 8.0 A TO-220 Drain  Gate  ● ◀▲ ● ●  Source TO-220F 1 2 3 1.Gate 2. Drain 3. Source 12 3 1.Gate 2. Drain 3.