PFP10N80E - N-Channel MOSFET

Key Features

 Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 49.6 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 0.93 Ω (Typ. ) @VGS=10V.

PFP10N80E n-channel mosfet by Wing On - Datasheet Preview

Datasheet Details

Part number	PFP10N80E
Manufacturer	Wing On
File Size	922.07 KB
Description	N-Channel MOSFET
Datasheet	PFP10N80E Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PFP10N80E / PFF10N80E FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 49.6 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 0.93 Ω (Typ.) @VGS=10V APPLICATION  High current, High speed switching  Suitable for power supplies, adaptors and PFC  SMPS (Switched Mode Power Supplies) PFP10N80E / PFF10N80E 800V N-Channel MOSFET BVDSS = 800 V RDS(on) = 0.93 Ω ID = 9.6 A TO-220 Drain  Gate  ● ◀▲ ● ●  Source TO-220F 1 2 3 1.Gate 2. Drain 3. Source 12 3 1.Gate 2. Drain 3.