SILICON EPITAXIAL PLANNAR TRANSISTOR
High frequency, high power NPN transistors in a plastic envelope, primarily for use in audio and general purpose
QUICK REFERENCE DATA
SYMBOL
TO-220F
CONDITIONS VBE = 0V MIN MAX 100 60 5 25 1.5 1.5 0.5 UNIT V V A A W V V s
VCESM VCEO IC ICM Ptot VCEsat VBE tf
Full PDF Text Transcription for 2SC4596E (Reference)
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2SC4596E GENERAL DESCRIPTION SILICON EPITAXIAL PLANNAR TRANSISTOR High frequency, high power NPN transistors in a plastic envelope, primarily for use in audio and general...
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nsistors in a plastic envelope, primarily for use in audio and general purpose QUICK REFERENCE DATA SYMBOL TO-220F CONDITIONS VBE = 0V MIN MAX 100 60 5 25 1.5 1.5 0.5 UNIT V V A A W V V s VCESM VCEO IC ICM Ptot VCEsat VBE tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Emitter forward voltage Fall time Tmb 25 IC = 2A; IB = 0.2A IE = 2A IC=2A,IB1=-IB2=0.
2SC4596E Datasheet
