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2SC4596E - NPN TRANSISTOR

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2SC4596E Product details

Description

SILICON EPITAXIAL PLANNAR TRANSISTOR High frequency, high power NPN transistors in a plastic envelope, primarily for use in audio and general purpose QUICK REFERENCE DATA SYMBOL TO-220F CONDITIONS VBE = 0V MIN MAX 100 60 5 25 1.5 1.5 0.5 UNIT V V A A W V V s VCESM VCEO IC ICM Ptot VCEsat VBE tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage

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