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9013 Datasheet

NPN SILICON TRANSISTOR

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9013
NPN SILICON TRANSISTOR
FEATURES
特征
Power dissipation
PCM : 0.625
Collector current
ICM : 0.5
Collector-base voltage
V(BR)CBO : 45
最大耗散功率
W Tamb=25
最大集电极电流
A
集电极--基极击穿电压
V
TO 92
1.EMITTER
发射极
2.BASE
基极
3.COLLECTOR
集电极
123
ELECTRICAL CHARACTERISTICS Tamb=25
电特性
环境温度
unless otherwise specified
除非另有规定
Parameter
参数
Symbol
符号
Test conditions
测试条件
MIN
最小值
TYP
典型值
Collector-base breakdown voltage
集电极--基极击穿电压
V(BR)CBO
Ic= 100 A IE=0
45
Collector-emitter breakdown voltage
集电极--发射极击穿电压
V(BR)CEO
Ic= 0. 1 mA IB=0
25
Emitter-base breakdown voltage
发射极--基极击穿电压
V(BR)EBO
IE= 100 A IC=0
5
Collector cut-off current
集电极--基极截止电流
ICBO VCB= 40 V IE=0
Collector cut-off current
集电极--发射极截止电流
ICEO VCE= 20 V IB=0
Emitter cut-off current
发射极--基极截止电流
IEBO VEB= 5 V IC=0
MAX
最大值
0.1
0.1
0.1
UNIT
单位
V
V
V
A
A
A
DC current gain(note)
直流电流增益
Collector-emitter saturation voltage
集电极--发射极饱和压降
Base-emitter saturation voltage
基极--发射极饱和压降
Base-emitter voltage
基极--发射极正向电压
HFE 1
HFE 2
VCE(sat)
VBE(sat)
VBE
VCE= 1 V, IC= 50 mA
VCE= 1V, IC =500 mA
IC= 500 mA, IB=50 mA
IC= 500mA, IB= 50 mA
IE=100mA
64
40
300
0.6 V
1.2 V
1.4 V
Transition frequency
特征频率
VCE= 6 V, IC= 20 mA
fT 150
f =30MHz
MHz
CLASSIFICATION OF HFE(1)
Rank
档次
D
Range
范围
64-91
分类
E
78-112
F
96-135
G
112-166
H
144-220
I
190-300
Wing Shing Computer Components Co., (H.K.)Ltd.
Homepage: http://www.wingshing.com
Tel:(852)2341 9276 Fax:(852)2797 8153
E-mail: wsccltd@hkstar.com


Part Number 9013
Description NPN SILICON TRANSISTOR
Maker Wing Shing Computer Components
Total Page 1 Pages
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