Datasheet Details
| Part number | D862 |
|---|---|
| Manufacturer | Wing Shing Computer Components |
| File Size | 63.65 KB |
| Description | 2SD862 |
| Download |
D862 Download (PDF)
|
|
|
|
| Part number | D862 |
|---|---|
| Manufacturer | Wing Shing Computer Components |
| File Size | 63.65 KB |
| Description | 2SD862 |
| Download |
D862 Download (PDF)
|
|
|
|
Silicon Epitaxial Planar Transistor Silicon NPN high frequency, Low Vce(sat) middle power transistors in a plastic envelope, primarily for use in audio and general purpose QUICK REFERENCE DATA SYMBOL TO-126 CONDITIONS VBE = 0V TYP VCESM VCEO IC ICM Ptot VCEsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Diode forward voltage Fall time Tmb 25 IC = 1.5A;
IB = 0.15A IF = 1.5A 1.5 MAX 20 20 2 10 0.5 2.0 - UNIT V V A A W V V s LIMITING VALUES SYMBOL VCESM VCEO VEBO IC IB Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Emitter-base oltage (open colloctor) Collector current (DC) Base current (DC) Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0V MIN -55 - Tmb 25 MAX 20 20 6 2 0.5 10 150 150 UNIT V V V A A W ELECTRICAL CHARACTERISTICS SYMBOL ICBO IEBO V(BR)CEO VCEsat hFE fT Cc ton ts tf PARAMETER Collector-base cut-off current Emitter-base cut-off current Collector-emitter breakdown voltage Collector-emitter saturation voltages DC current gain Transition frequency at f = 5MHz Collector capacitance at f = 1MHz On times Tum-off storage time Fall time CONDITIONS VCB=20V VEB=5V IC=1mA IC = 1.5A;
IB = 0.15A IC = 100mA;
2SD862 GENERAL.
| Part Number | Description |
|---|