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2SD525
NPN EPITAXIAL SILICON TRANSISTOR
LOW FREQUENCY POWER AMPLIFIER
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TO-220
Complement to 2SB595
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ABSOLUTE MAXIMUM RATINGS (TA=25℃)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25℃) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 100 100 5 5 40 150 -50~150 Unit V V V A W
℃ ℃
ELECTRICAL CHARACTERISTICS (TA=25℃)
Characteristic Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector- Emitter Saturation Voltage Current Gain Bandwidth Product Symbol ICBO IEBO hFE1 VCE(sat) fT Test Condition VCB= 100V , IE=0 VEB= 5V , IC=0 VCE= 5V , IC=1A IC=4A , IB=0.4A VCE= 5V , IC=0.5A Min Typ Max 10 10 320 2.
D525 Datasheet
