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SFTN1850
N-Channel Enhancement Mode Power MOSFET
Drain Gate
Source
TO-220F Plastic Package 1.Gate 2.Drain 3.Source
Absolute Maximum Ratings Parameter
Symbol
Value
Drain-Source Voltage
Gate-Source Voltage Drain Current 1)
TC = 25℃
Peak Drain Current 1) 2) Avalanche energy,single pulse 3)
TC = 100℃
Power Dissipation
TC = 25℃
Maximum Thermal Resistance from Juntion to Case2)
Maximum Thermal Resistance from Juntion to Ambient 2)
VDS VGS
ID
IDM EAS Ptot RθJC RθJA
500 ± 30
18 11
72 950 37 3.4 62.5
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to + 150
1) Id limitedby maximumjunctiontemperature. 2) Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C. 3) L = 5.3 mH, IAS = 18.0 A,VDD = 50 V,Rg = 25Ω,Starting Tj = 25 °C.
SFTN1850 Datasheet
