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SFTN1180
N-Channel Enhancement Mode Power MOSFET
Drain Gate
Source
TO-220F Plastic Package 1.Gate 2.Drain 3.Source
Absolute Maximum Ratings Parameter
Symbol
Value
Unit
Drain-Source Voltage Gate-Source Voltage
VDS
800
V
VGS
± 20
V
Gate-Source Voltage AC(f > 1 Hz)
VGS
± 30
V
Drain Current Peak Drain Current
TC = 25℃ TC = 100℃
ID
11 7.1
A
IDM
33
A
Power Dissipation
TC = 25℃
Ptot
41
W
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to + 150
℃
Thermal Characteristics
Parameter
Symbol
Max.
Unit
Maximum Thermal Resistance from Juntion to Case
RθJC
0.
SFTN1180 Datasheet
