SFTN1850 Overview
2) Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C. 3) L = 5.3 mH, IAS = 18.0 A,VDD = 50 V,Rg = 25Ω,Starting Tj = 25 °C. Unit V V A A mJ W ℃/W ℃/W ℃ Winning Team 互創國際 Dated:.
| Part number | SFTN1850 |
|---|---|
| Datasheet | SFTN1850-WinningTeam.pdf |
| File Size | 359.97 KB |
| Manufacturer | Winning Team |
| Description | N-Channel MOSFET |
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2) Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C. 3) L = 5.3 mH, IAS = 18.0 A,VDD = 50 V,Rg = 25Ω,Starting Tj = 25 °C. Unit V V A A mJ W ℃/W ℃/W ℃ Winning Team 互創國際 Dated:.
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