SFTN3906MP
N-Channel Enhancement Mode MOSFET
Drain Gate
Source
1. Source 2. Source 3. Source 4. Gate 5. Drain 6. Drain 7. Drain 8. Drain
DFN3030 Plastic Package
Absolute Maximum Ratings Parameter
Drain-Source Voltage
Drain-Gate Voltage Drain Current
- Continuous
Power Dissipation Drain Current
- Pulsed 1) Single Pulse Avalanche Current 2) Single Pulse Avalanche Energy 2)
TC = 25℃ TC = 100℃ TC = 25℃
Operating Junction and Storage Temperature Range
Thermal Characteristics Parameter
Thermal Resistance Junction to Ambient Thermal Resistance Junction to Case
1) Repetitive Rating : Pulsed width limited by maximum junction temperature. 2) VDD = 25 V, VGS = 10 V, L= 0.1m H, IAS = 42 A, RG = 25 Ω, Starting TJ = 25℃.
Symbol VDS VGS
PD IDM IAS EAS Tj, Tstg
Value 30 ± 20 60 38 45 240 42 88
- 55 to + 150
Symbol RθJA RθJC
Max. 62 2.8
Unit V V A W A A m J ℃
Unit ℃/W ℃/W
Winning Team 互創國際
Dated: 02/12/2017 PT
Characteristics at Tj = 25℃ unless otherwise specified
Parameter...
