SFTN3908MP Datasheet | Winning Team

N-Channel Enhancement Mode MOSFET Drain Gate Source 1. Source 2. Source 3. Source 4. Gate 5. Drain 6. Drain 7. Drain 8. Drain DFN3030 Plastic Package Absolute Maximum Ratings Parameter Drain-Source Voltage Drain-Gate Voltage Drain Current - Continuous Power Dissipation Drain Current - Pulsed 1) Single Pulse Avalanche Current 2) Single Pulse Avalanche Energy 2) TC = 25℃ TC = 100℃ TC = 25℃ Operating Junction and Storage Temperature Range Thermal Characteristics Parameter Thermal Resistance Junction to Ambient Thermal Resistance Junction to Case 1) Repetitive Rating : Pulsed width limited by maximum junction temperature. 2) VDD = 25 V, VGS = 10 V, L= 0.1m H, IAS = 30 A, RG = 25 Ω, Starting TJ = 25℃. Symbol VDS VGS PD IDM IAS EAS Tj, Tstg Value 30 ± 20 48 30 35 192 30 45 - 55 to + 150 Symbol RθJA RθJC Max. 62 3.6 Unit V V A W A A m J ℃ Unit ℃/W ℃/W Winning Team 互創國際 Dated: 02/12/2017 PT Characteristics at Tj = 25℃ unless otherwise specified Parameter Drain-Source Breakdown Voltage at ID = 250 µA Gate-Source Threshold Voltage at VDS = VGS, ID = 250 µA Drain-Source Leakage Current at VDS = 30 V at VDS = 24 V ,TJ = 125℃ Gate-Source Leakage Current at VGS = ± 20 V Drain-Source On-State Resistance at VGS = 10 V, ID = 16 A at VGS = 4.5 V, ID = 8 A Forward Transconductance at VDS = 10 V, ID = 8 A Input Capacitance at VGS = 0 V, VDS = 25 V, f = 1 MHz Output Capacitance at VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse Transfer Capacitance at VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-On Delay Time at VGS = 10 V, VDD = 15 V, ID = 15 A, RGEN = 3.3 Ω Turn-On Rise Time at VGS = 10 V, VDD = 15 V, ID = 15 A, RGEN = 3.3 Ω Turn-Off Delay Time at VGS = 10 V, VDD = 15 V, ID = 15 A, RGEN = 3.3...