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SFTN3568
N-Channel Enhancement Mode Power MOSFET
Drain Gate
Source
TO-220F Plastic Package 1.Gate 2.Drain 3.Source
Absolute Maximum Ratings Parameter
Symbol
Value
Unit
Drain-Source Voltage Gate-Source Voltage Drain Current Peak Drain Current
VDS
500
V
VGS
± 30
V
ID
12
A
t = 1 ms
IDM
48
A
Power Dissipation
Ptot
40
W
Single Pulse Avalanche energy 1) Storage Temperature Operating Junction Temperature
1) VDD = 90 V, Tch = 25°C(initial), L = 4.3 mH, IAR = 12 A, RG = 25 Ω.
EAS
364
mJ
Tstg
- 55 to + 150
℃
TJ
150
℃
Thermal Characteristics Parameter
Maximum Thermal Resistance from Juntion to Case Maximum Thermal Resistance from Juntion to Ambient
Symbol RθJC RθJA
Max. 3.125 62.
SFTN3568 Datasheet
