SFTN3568 Datasheet | Winning Team

N-Channel Enhancement Mode Power MOSFET Drain Gate Source TO-220F Plastic Package 1.Gate 2.Drain 3.Source Absolute Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage Gate-Source Voltage Drain Current Peak Drain Current ± 30 A t = 1 ms Power Dissipation Ptot Single Pulse Avalanche energy 1) Storage Temperature Operating Junction Temperature 1) VDD = 90 V, Tch = 25°C(initial), L = 4.3 m H, IAR = 12 A, RG = 25 Ω. 364 m J Tstg - 55 to + 150 ℃ ℃ Thermal Characteristics Parameter Maximum Thermal Resistance from Juntion to Case Maximum Thermal Resistance from Juntion to Ambient Symbol RθJC RθJA Max. 3.125 62.5 Unit ℃/W ℃/W Winning Team 互創國際 Dated: 09/11/2017 Characteristics at TJ = 25℃ unless otherwise specified Parameter Symbol...