SFTN3910R Datasheet | Winning Team

N-Channel Enhancement Mode MOSFET Drain Gate Source 1.Gate 2.Drain 3.Source TO-252 Plastic Package Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Peak Drain Current 1) Avalanche energy,single pulse 2) Avalanche current, single pulse 2) Power Dissipation Operating Junction Temperature Range Storage Temperature Range Symbol Value Unit ±20 TC = 25℃ TC = 100℃ 45 28 13 m J TC = 25℃ - 55 to 150 ℃ Tstg - 55 to 150 ℃ Thermal Characteristics Parameter Thermal Resistance from Juntion to Ambient Thermal Resistance from Juntion to Case 1) Repetitive Rating : Pulsed width limited by maximum junction temperature. 2) VDD=25V, VGS=10V, L=0.1m H, IAS=16A,RG=25Ω, Starting TJ=25°C. Symbol RθJA RθJC Max. 62 3.8 Unit ℃/W ℃/W Winning Team...