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SFTN3910R
N-Channel Enhancement Mode MOSFET
Drain
Gate
Source
1.Gate 2.Drain 3.Source TO-252 Plastic Package
Absolute Maximum Ratings Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current
Peak Drain Current 1) Avalanche energy,single pulse 2) Avalanche current, single pulse 2) Power Dissipation Operating Junction Temperature Range Storage Temperature Range
Symbol
Value
Unit
VDS
30
V
VGS
±20
V
TC = 25℃ TC = 100℃
ID
45 28
A
IDM
180
A
EAS
13
mJ
IAS
16
A
TC = 25℃
PD
33
W
TJ
- 55 to 150
℃
Tstg
- 55 to 150
℃
Thermal Characteristics
Parameter
Thermal Resistance from Juntion to Ambient
Thermal Resistance from Juntion to Case
1) Repetitive Rating : Pulsed width limited by maximum junction temperature. 2) VDD=25V, VGS=10V, L=0.
SFTN3910R Datasheet
