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SFTN3005R
N-Channel Enhancement Mode MOSFET
Drain
Gate
Source
1.Gate 2.Drain 3.Source TO-252 Plastic Package
Absolute Maximum Ratings Parameter
Symbol
Value
Unit
Drain-Source Voltage Gate-Source Voltage Drain Current
Drain Current
Peak Drain Current Avalanche Current, L = 0.1 mH Avalanche Energy, L = 0.1 mH Power Dissipation
VDS
30
V
VGS
± 20
V
TA = 25℃ TA = 70℃
ID
11.8 9.5
A
TC = 25℃ TC = 70℃
ID
48 38
A
IDM
120
A
IAR
15
A
EAS
11.25
mJ
TA = 25℃
PD
2
W
Power Dissipation
TC = 25℃
PD
32.9
W
Operating Junction and Storage Temperature Range
TJ,Tstg
- 55 to 150
℃
Thermal Characteristics
Parameter
Symbol
Max.
Unit
Thermal Resistance from Juntion to Ambient 1)
RθJA
62
℃/W
Thermal Resistance from Juntion to Case
RθJC
3.
SFTN3005R Datasheet
