Winsem Technology Corp.
WTBV116DL / WTBV116DI
POWER TRANSISTOR
ELECTRICAL CHARACTERISTICS ( Tc = 25℃ )
Parameter
Symbol
Test Condition
Min Typ Max Unit
Collector-Base Voltage
Collector-Emitter Breakdown Voltage
BVCBO
BVCEO
IC = 1mA, IB=0
IC = 1mA, IE=0
800 ─
400 ─
─
─
V
V
Emitter- Base Breakdown Voltage
BVEBO IE = 1mA, IC=0
9─
─
V
Collector Cutoff Current
ICBO VCB = 700V, IE=0
──
1㎂
Emitter Cutoff Current
IEBO VEB = 9V, IC=0
──
1㎂
hFE1 VCE = 10V, IC=10mA 20 ─
─
DC Current Gain
hFE2 VCE = 10V, IC=100mA 25
─
45
hFE3 VCE = 10V, IC=280mA 20
─
─
VCE(SAT1) IC/IB = 50mA / 10mA ─ ─ 0.5
Collector-Emitter Saturation Voltage VCE(SAT2) IC/IB = 100mA / 10mA
─
─
1
V
VCE(SAT3) IC/IB = 200mA / 20mA
─
─
3
Base-Emitter Saturation Voltage
VBE(SAT1) IC/IB = 50mA / 10mA
VBE(SAT2) IC/IB = 100mA / 10mA
─
─
─ 1.15
V
─ 1.25
Dynamic
Frequency
Output Capacitance
fT VCE=10V, IC=0.1A
Cob VCB=10V, f=01.MHz
4─
─ MHz
─ 21 ─ pF
Resistive Load Switching Time (Ratings)
Rise Time
tr
Storage Time
tSTG
Fall Time
tf
Vcc=125V, IC=100mA,
IB1 = IB2 = 20mA,
tp = 25uS
Duty Cycle ≦ 1%
─
─
─
─2
56
0.2 0.7
uS
uS
uS
Version A10
Page 2
