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K2611 Datasheet Silicon N-channel MOSFET

Manufacturer: Winsemi

Datasheet Details

Part number K2611
Manufacturer Winsemi
File Size 623.14 KB
Description Silicon N-Channel MOSFET
Datasheet K2611-Winsemi.pdf

General Description

This N-Channel enhancement mode power field effect transistors are produced using Winsemi's proprietary, planar stripe ,DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.

These devices are well suited for high efficiency switch mode power supplies.

Key Features

  • 11A,900V, RDS(on)(Max1.10Ω)@VGS=10V.
  • Ultra-low Gate charge(Typical 72nC).
  • Fast Switching Capability.
  • 100%Avalanche Tested.
  • Maximum Junction Temperature Range(150℃) K2611 Silicon N-Channel MOSFET General.

K2611 Distributor