K2611 Datasheet | Specifications & PDF Download

Features ■ 11A,900V, RDS(on)(Max1.10Ω)@VGS=10V ■ Ultra-low Gate charge(Typical 72nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junc

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2SK2611 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2611 DC−DC Converter, Relay Drive and Motor Drive Applications Unit

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2SK2611 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2611 DC−DC Converter, Relay Drive and Motor Drive Applications z Low

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K2611B Product Description Silicon N-Channel MOSFET Features � 11A,900V, RDS(on)(Max1.10Ω)@VGS=10V � Ultra-low Gate charge(Typical 66nC) � Fast Switc

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=9A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Fast Switching Speed ·Minimum Lot

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www.DataSheet.in 2SK2611 Silicon N-Channel MOSFET Features � � � � � 11A,500V,RDS(on)(Max0.55Ω)@VGS=10V Ultra-low Gate charge(Typical 43nC) Fast Swit

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SEMICONDUCTOR 2SK2611 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (9A, 900Volts) DESCRIPTION The Nell 2SK2611 is a three-termina

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