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SBP13005-O Datasheet Preview

SBP13005-O Datasheet

High Voltage Fast-Switching NPN Power Transistor

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SBP13005-O
High Voltage Fast-Switching NPN Power Transistor
Features
Very High Switching Speed
High Voltage Capability
Wide Reverse Bias SOA
General Description
This Device is designed for high voltage, High speed
switching characteristics required such as lighting system,
switching mode power supply.
TO-220HW
Absolute Maximum Ratings
Symbol
Paramete
VCES
Collector-Emitter Vroltage
VCEO
VEBO
IC
ICP
IB
IBM
PC
TJ
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector pulse Current
Base Current
Base Peak Current
Total Dissipation at Tc* = 25
Total Dissipation at Ta* = 25
Operation Junction Temperature
TSTG
Storage Temperature
Tc: Case temperature (good cooling)
Ta: Ambient temperature (without heat sink)
Test Conditions
VBE = 0
IB = 0
IC = 0
tP = 5ms
Value
700
400
9.0
4.0
8.0
2.0
4.0
75
2.0
- 40 ~ 150
- 40 ~ 150
Units
V
V
V
A
A
A
A
W
Thermal Characteristics
Symbol
Parameter
RθJc Thermal Resistance Junction to Case
RθJA Thermal Resistance Junction to Ambient
Value
1.67
62.5
Units
/W
/W
Ordering Information
Order codes
Package
SBP13005-O
TO220C
SBP13005-O-HW
TO220HW
Marking
P13005-O
P13005-O
Halogen Free
NO
NO
Packaging
Tube
Tube
Rev.B Mar.2012
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.




Winsemi

SBP13005-O Datasheet Preview

SBP13005-O Datasheet

High Voltage Fast-Switching NPN Power Transistor

No Preview Available !

SBP13005-O
Electrical Characteristics (TC=25unless otherwise noted)
Symbol
Parameter
Collector-Emitter Breakdown
VCEO(sus)
Voltage
VCE(sat)
Collector-Emitter Saturation
Voltage
VBE(sat) Base-Emitter Saturation Voltage
Collector-Base Cutoff Current
ICBO
(Vbe=-1.5V)
hFE DC Current Gain
Resistive Load
ts Storage Time
tf Fall Time
Inductive Load
ts Storage Time
tf Fall Time
Inductive Load
ts Storage Time
tf Fall Time
Test Conditions
Ic=10mA,Ib=0
Value
Units
Min Typ Max
400 - - V
Ic=1.0A,Ib=0.2A
Ic=2.0A,Ib=0. 5A
Ic=4A,Ib=1.0A
Ic=1.0A,Ib=0.2A
Ic=2.0A,Ib=0. 5A
Vcb=700V
Vcb=700V, Tc=100
Vce=2V,Ic=1.0A
Vce=2V, Ic=2.0A
VCC=125V , Ic=2.0A
ITBp1==02.54A , IB2=-1.0A
0.3
- - 0.5
1.0
1.2
--
1.6
1.0
--
5.0
10 -
8-
-
2.5
0.15
40
40
4.0
0.4
V
V
mA
VCC=15V ,Ic=1A
IB1=0.4A , IB2=-0.1A
- 1.2 4.0
L=0.35mH,Vclamp=300V - 0.12 0.3
VCC=15V ,Ic=1A
- 1.2 3.0
IB1=0.4A , IB2=-1.0A
L=0.35mH,Vclamp=300V - 0.08 0.4
Tc=100
Note:
Pulse Test : Pulse width 300, Duty cycle 2%
.
Steady, keep you advance
2/6


Part Number SBP13005-O
Description High Voltage Fast-Switching NPN Power Transistor
Maker Winsemi
Total Page 6 Pages
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