Datasheet4U Logo Datasheet4U.com

WFD4N60 - Power MOSFET

Description

This Power MOSFET is produced using Winsemi’s advanced Planar stripe, DMOS technology.

have a high Rugged avalanche characteristics.

Features

  • 4A,600V. RDS(on)(Max 2.5Ω)@VGS=10V.
  • Ultra-low Gate Charge(Typical 16nC).
  • Fast Switching Capability.
  • 100%Avalanche Tested.
  • Isolation Voltage ( VISO = 4000V AC ).
  • Maximum Junction Temperature Range(150℃) General.

📥 Download Datasheet

Datasheet Details

Part number WFD4N60
Manufacturer Winsemi
File Size 505.78 KB
Description Power MOSFET
Datasheet download datasheet WFD4N60 Datasheet

📁 Similar Datasheet

  • WFD4N60 - N-Channel MOSFET (Wisdom technologies)
  • WFD430 - N-Channel MOSFET (Wisdom technologies)
  • WFD2N60 - N-Channel MOSFET (Wisdom technologies)
  • WFD5N60 - HIGH VOLTAGE N-Channel MOSFET (Wisdom technologies)
  • WFD5N65L - N-Channel MOSFET (INCHANGE)
  • WFD830B - N-Channel MOSFET (INCHANGE)
Other Datasheets by Winsemi

Full PDF Text Transcription

Click to expand full text
WFD4N60 Silicon N-Channel MOSFET Features ■ 4A,600V.RDS(on)(Max 2.5Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 16nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Isolation Voltage ( VISO = 4000V AC ) ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’s advanced Planar stripe, DMOS technology. This latest technology has Been Especially designed to minimize on-state resistance, have a high Rugged avalanche characteristics. This devices is specially well Suited for half bridge and full bridge resonant topology line a Electronic lamp ballast.
Published: |