Datasheet Summary
HIGH VOLTAGE N-Channel MOSFET
WFU4N60/WFD4N60
600V N-Channel MOSFET
Features
- Low Intrinsic Capacitances
- Excellent Switching Characteristics
- Extended Safe Operating Area
- Unrivalled Gate Charge : 15 nC (Typ.)
- BVDSS=600V,ID=4A
- Lower RDS(on) : 2.5Ω (Max) @VG=10V
- 100% Avalanche Tested
TO‐252
TO‐251
G‐Gate,D‐Drain,S‐Sourse
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