WFD4N60B Description
This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology. This latest technology has beenespecially designed to minimize on-state resistance, have a high Rugged avalanche characteristics. This devices is specially well Suited for half bridge and full bridge resonant topology line a electronic lamp ballast.
WFD4N60B Key Features
- 4A,600V.RDS(on)(Max 2.4Ω)@VGS=10V
- Ultra-low Gate Charge(Typical 16nC)
- Fast Switching Capability
- 100%Avalanche Tested
- Isolation Voltage ( VISO = 4000V AC )
- Maximum Junction Temperature Range(150℃)