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WFD4N60B Datasheet Power MOSFET

Manufacturer: Winsemi

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Datasheet Details

Part number WFD4N60B
Manufacturer Winsemi
File Size 506.08 KB
Description Power MOSFET
Download WFD4N60B Download (PDF)

General Description

This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology.

This latest technology has beenespecially designed to minimize on-state resistance, have a high Rugged avalanche characteristics.

This devices is specially well Suited for half bridge and full bridge resonant topology line a electronic lamp ballast.

Overview

WFD4N60B Silicon N-Channel MOSFET.

Key Features

  • 4A,600V. RDS(on)(Max 2.4Ω)@VGS=10V.
  • Ultra-low Gate Charge(Typical 16nC).
  • Fast Switching Capability.
  • 100%Avalanche Tested.
  • Isolation Voltage ( VISO = 4000V AC ).
  • Maximum Junction Temperature Range(150℃) General.

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