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WFD4N60 Datasheet Power MOSFET

Manufacturer: Winsemi

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Datasheet Details

Part number WFD4N60
Manufacturer Winsemi
File Size 505.78 KB
Description Power MOSFET
Download WFD4N60 Download (PDF)

General Description

This Power MOSFET is produced using Winsemi’s advanced Planar stripe, DMOS technology.

This latest technology has Been Especially designed to minimize on-state resistance, have a high Rugged avalanche characteristics.

This devices is specially well Suited for half bridge and full bridge resonant topology line a Electronic lamp ballast.

Overview

WFD4N60 Silicon N-Channel MOSFET.

Key Features

  • 4A,600V. RDS(on)(Max 2.5Ω)@VGS=10V.
  • Ultra-low Gate Charge(Typical 16nC).
  • Fast Switching Capability.
  • 100%Avalanche Tested.
  • Isolation Voltage ( VISO = 4000V AC ).
  • Maximum Junction Temperature Range(150℃) General.

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