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WFD4N60B - Power MOSFET

Description

This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology.

This latest technology has beenespecially designed to minimize on-state resistance, have a high Rugged avalanche characteristics.

Features

  • 4A,600V. RDS(on)(Max 2.4Ω)@VGS=10V.
  • Ultra-low Gate Charge(Typical 16nC).
  • Fast Switching Capability.
  • 100%Avalanche Tested.
  • Isolation Voltage ( VISO = 4000V AC ).
  • Maximum Junction Temperature Range(150℃) General.

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Datasheet Details

Part number WFD4N60B
Manufacturer Winsemi
File Size 506.08 KB
Description Power MOSFET
Datasheet download datasheet WFD4N60B Datasheet

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Full PDF Text Transcription

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WFD4N60B Silicon N-Channel MOSFET Features ■ 4A,600V.RDS(on)(Max 2.4Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 16nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Isolation Voltage ( VISO = 4000V AC ) ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology. This latest technology has beenespecially designed to minimize on-state resistance, have a high Rugged avalanche characteristics. This devices is specially well Suited for half bridge and full bridge resonant topology line a electronic lamp ballast.
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