WFF10N65L Product Description
Silicon N-Channel MOSFET
Features
� 10A,650V,RDS(on)(Max1.0Ω)@VGS=10V
� Ultra-low Gate charge(Typical 32nC)
� Fast Switching Capability
� 100%Avalanche Tested
� Enhanced EMI capability
� Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is N channel enhanced high voltage power MOS field effect
transistor fabrication by F-CellTM planar high pressure VDMOS process technology. this
product have lower resistance,Superior switching performance and high EAS capability.
The product can be widely used in AC-DC switching power supply, DC-DC power
converter, and high H bridge PWM motor drive.
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
IDM
VGS
EAS
PD
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Continuous Drain Current(@Tc=100℃)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Total Power Dissipation(@Tc=25℃)
Derating Factor above 25℃
TJ,Tstg
Junction and Storage Temperature
Thermal Characteristics
Symbol
Parameter
RQJC
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Junction-to -Ambient
(Note1)
(Note2)
Value
650
10
6.3
40
±30
500
40
0.32
-55~150
Units
V
A
A
A
V
mJ
W
W/℃
℃
Value
Units
Min Typ Max
- - 3.12 ℃/W
- - 62.5 ℃/W
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
WT-F117-Rev.A0 Nov 2015(F0)
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
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