WFF10N65L Datasheet | Winsemi

Description Silicon N-Channel MOSFET Features - 10A,650V,RDS(on)(Max1.0Ω)@VGS=10V - Ultra-low Gate charge(Typical 32n C) - Fast Switching Capability - 100%Avalanche Tested - Enhanced EMI capability - Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is N channel enhanced high voltage power MOS field effect transistor fabrication by F-Cell TM planar high pressure VDMOS process technology. this product have lower resistance,Superior switching performance and high EAS capability. The product can be widely used in AC-DC switching power supply, DC-DC power converter, and high H bridge PWM motor drive. Absolute Maximum Ratings Symbol Parameter VDSS IDM VGS EAS Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Total Power Dissipation(@Tc=25℃) Derating Factor above 25℃ TJ,Tstg Junction and...