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Winsemi

WFF12N65S Datasheet Preview

WFF12N65S Datasheet

Power MOSFET

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WFF12N65S
650V Super-Junction Power MOSFET
Features
Ultra low Rdson
Ultra low gate charge (typ. Qg = 28nC)
100% UIS tested
RoHS compl iant
Maximum Junction Temperature Range(150℃)
General Description
Power MOSFET is fabricated using advanced super junction
technology. The resulting device has extremely low on
resistance, making it especially suitable for applications which
require superior power density and outstanding efficiency.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
I DM
Drain Source Voltage
Continuous Drain Current(@Tc=25)
Drain Current Pulsed 1)
VGS Gate to Source Voltage
EAS Single Pulse Avalanche Energy 2)
IAR Single Pulse Avalanche Current 1)
EAR Repetitive Avalanche Energy 1)
Total Power Dissipation(@Tc=25)
PD -Derate above 25
TJ Junction Temperature
Tstg Storage Temperature
Is Continuous diode forward current
Is,pulse Diode pulse current
Notes:
1.Repetitive Rating:Pulse width limited by maximum Junction Temperature
2.IAS=3.5,VDD=60V,R G=25Ω ,Starting TJ=25
Value
650
12
30
±30
350
12
12.5
33
0.26
150
-55~150
12
30
Units
V
A
A
V
mJ
A
mJ
W
A
A
Thermal Characteristics
Symbol
Parameter
R θJC
RθJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Junction -to -Ambient
Value
Units
Min Typ Max
- - 3.8 /W
- - 80 /W
WT-F042-Rev.A1 Nov.2013
Copyr ight@Winsemi Microelectronics Co., Ltd., All right reserved.




Winsemi

WFF12N65S Datasheet Preview

WFF12N65S Datasheet

Power MOSFET

No Preview Available !

WFF12N65S
Electrical Characteristics(Tc=25unless otherwise noted)
Characteristics
Gate leakage current
Drain cut -off current
Drain -source breakdownvoltage
Gate threshold voltage
Drain -source ON resistance
Gate resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Turn-on delay time
Symbol
I GSS
I DSS
V(BR)DSS
VGS(th)
R DS(ON)
RG
C iss
C rss
C oss
td(on)
Test Condition
VGS=±30V,VDS=0V
VDS=650,VGS=0V
I D=250µA ,VGS=0V
VDS=VGS,I D=250uA
VGS=10V,ID=6A
Tj=25
Tj=125
f=1MHz,open drain
VDS=25V,
VGS=0V,
f=1MHz
Min Type
--
--
650 -
2.5 -
- 0.315
- 0.69
- 0.9
- 1040
- 10
- 780
- 16
Rise time
Turn-off delay time
tr
td(off)
VDD = 380V, I D = 6A R G
= 4.7Ω, VGS=10V
-
-
14
40
Fall time
tf
-5
Gate to source charge
Qgs
-6
Gate to drain charge
Gate charge total
Q gd
Qg
VDD=480 V,
VG S=0 to 10 V
I D=6A ,
-
-
13
28
Gate plateau voltage
Vplateau
- 5.5
Max
±100
1
-
4.5
0.35
-
-
-
-
-
-
-
-
-
-
Un it
nA
µA
V
V
pF
ns
nC
Source-Drain Ratings and Characteristics(Ta=25)
Characteristics
Symbol Test Condition
Min Type Max Unit
Diode forward voltage
VSD
VGS=0 V, I F=6A
- - 1.4 V
Reverse recovery time
trr
VR=50 V, IF=12A,
- 439 - ns
Reverse recovery charge
Qrr
dIF/dt=100 A/μs
- 3.6 - µc
Peak reverse recovery current
I rrm
- 15
-A
Steady, keep you advance
2/ 6


Part Number WFF12N65S
Description Power MOSFET
Maker Winsemi
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WFF12N65S Datasheet PDF






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