WFF12N65S mosfet equivalent, power mosfet.
� Ultra low Rdson � Ultra low gate charge (typ. Qg = 28nC) � 100% UIS tested � RoHS compl iant � Maximum Junction Temperature Range(150℃)
General Description
Power MOSFE.
which require superior power density and outstanding efficiency.
Absolute Maximum Ratings
Symbol
Parameter
VDSS ID I.
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