WFF12N65S - Power MOSFET

Description

Power MOSFET is fabricated using advanced super junction technology.

The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency.

Features

Ultra low Rdson.
Ultra low gate charge (typ. Qg = 28nC).
100% UIS tested.
RoHS compl iant.
Maximum Junction Temperature Range(150℃) General.

Winsemi

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Datasheet Details

Part number	WFF12N65S
Manufacturer	Winsemi
File Size	384.97 KB
Description	Power MOSFET
Datasheet	WFF12N65S Datasheet
Additional preview pages of the WFF12N65S datasheet.

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Full PDF Text Transcription

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WFF12N65S 650V Super-Junction Power MOSFET Features � Ultra low Rdson � Ultra low gate charge (typ. Qg = 28nC) � 100% UIS tested � RoHS compl iant � Maximum Junction Temperature Range(150℃) General Description Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency.

Published: Mar 27, 2017 |