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WFF20N60 Datasheet Power MOSFET

Manufacturer: Winsemi

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Datasheet Details

Part number WFF20N60
Manufacturer Winsemi
File Size 275.79 KB
Description Power MOSFET
Datasheet download datasheet WFF20N60 Datasheet

General Description

This Power MOSFET is produced using Winsemi's advancedplanar s tripe,VDMOS technology.this latest technology has beenespecially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially w ellsuited for AC-DC switching power supplies, DC-DC powerConverters high voltage H-bridge motor drive PWM Absolute Maximum Ratings Symbol Parameter VDSS ID Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) IDM Drain Current Pulsed VGS Gate to Source Voltage EAS Single Pulsed Avalanche Energy IAR Avalanche Current EAR Repetitive Avalanche Energy dv/dt PD Peak Diode Recovery dv /dt Total Power Dissipation(@Tc=25℃) -Derate above 25℃ TJ,T stg Junct

Key Features

  • 20A,600V,RDS(on)(Max0.39Ω)@VGS=10V.
  • Ultra-low Gate charge(Typical 50nC).
  • Fast Switching Capability.
  • 100%Avalanche Tested.
  • Maximum Junction Temperature Range(150℃) WFF20N60 Silicon N-Channel MOSFET General.

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