Winsemi WFF20N60S
The resulting device has extremely low on resistance,making it especially suitable for applic ations which require superior power density and outstanding efficienc y.| Part No. | WFF20N60S |
|---|---|
| Datasheet | WFF20N60S Download |
| Manufacturer |  Winsemi |
| Description | Power MOSFET |
| Buy | Stock & Price |
FEATURES
Ultra low Rdson Ultra-low Gate charge(Typical 65nC) 100% UIS Tested RoHS compliantGENERAL DESCRIPTION
Winsemi Power MOSFET is fabricated using advanced super junction technology. D G SABSOLUTE MAXIMUM RATINGS
Symbol Parameter VDSS Drain Source Voltage Continuous Drain Current(@Tc=25℃) ID (@Tc=100℃) IDM Drain Current Pulsed1) VGS Gate to Source Voltage EAS Single Pulse Avalanche Energy2) IAR Single Pulse Avalanche Current1) EAR Repetitive Avalanche Energy 1) Total Power Dissipation(@Tc=25℃) PD -Derate above 25℃ TJ Junction Temperature Tstg Storage Temperature IS Continuous diode forward current IS,pulse Diode pulse current Value 600 20 13 60 ±30 700 20 20.5 34 0.28 150 -55~150 20 60 Units V A A V mJ A mJ W W/℃ ℃ ℃ A A Thermal Ch
