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WFF20N60S - Power MOSFET

General Description

Winsemi Power MOSFET is fabricated using advanced super junction technology.The resulting device has extremely low on resistance,making it especially suitable for applic ations which require superior power density and outstanding efficienc y.

Key Features

  • Ultra low Rdson.
  • Ultra-low Gate charge(Typical 65nC).
  • 100% UIS Tested.
  • RoHS compliant General.

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Datasheet Details

Part number WFF20N60S
Manufacturer Winsemi
File Size 416.63 KB
Description Power MOSFET
Datasheet download datasheet WFF20N60S Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WFF20N60S Silicon N-Channel MOSFET Features � Ultra low Rdson � Ultra-low Gate charge(Typical 65nC) � 100% UIS Tested � RoHS compliant General Description Winsemi Power MOSFET is fabricated using advanced super junction technology.The resulting device has extremely low on resistance,making it especially suitable for applic ations which require superior power density and outstanding efficienc y.