WFF20N60S Overview
Description
Winsemi Power MOSFET is fabricated using advanced super junction resulting device has extremely low on resistance,making it especially suitable for applic ations which require superior power density and outstanding efficienc y. D G S Symbol Parameter VDSS Drain Source Voltage Continuous Drain Current(@Tc=25℃) ID (@Tc=100℃) IDM Drain Current Pulsed1) VGS Gate to Source Voltage EAS Single Pulse Avalanche Energy2) IAR Single Pulse Avalanche Current1) EAR Repetitive Avalanche Energy 1) Total Power Dissipation(@Tc=25℃) PD -Derate above 25℃ TJ Junction Temperature Tstg Storage Temperature IS Continuous diode forward current IS,pulse Diode pulse current Value 600 20 13 60 ±30 700 20 20.5 34 0.28 150 -55~150 20 60 Units V A A V mJ A mJ W W/℃ ℃ ℃ A A Thermal Ch.
Key Features
- � Ultra low Rdson � Ultra-low Gate charge(Typical 65nC) � 100% UIS Tested � RoHS compliant
