WFF20N60 - Power MOSFET

Product Overview

Winsemi

Datasheet Details

Part number	WFF20N60
Manufacturer	Winsemi
File Size	275.79 KB
Description	Power MOSFET
Datasheet	WFF20N60 Datasheet
Additional preview pages of the WFF20N60 datasheet.

Product details

Description

This Power MOSFET is produced using Winsemi's advancedplanar s tripe,VDMOS technology.this latest technology has beenespecially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially w ellsuited for AC-DC switching power supplies, DC-DC powerConverters high voltage H-bridge motor drive PWM Absolute Maximum Ratings Symbol Parameter VDSS ID Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) IDM

Features

20A,600V,RDS(on)(Max0.39Ω)@VGS=10V.
Ultra-low Gate charge(Typical 50nC).
Fast Switching Capability.
100%Avalanche Tested.
Maximum Junction Temperature Range(150℃) WFF20N60 Silicon N-Channel MOSFET General.

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Published: Mar 27, 2017 |