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WFF20N60 - Power MOSFET

General Description

This Power MOSFET is produced using Winsemi's advancedplanar s tripe,VDMOS technology.this latest technology has beenespecially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially w ellsuited for AC-DC switching power supplies, DC-DC powe

Key Features

  • 20A,600V,RDS(on)(Max0.39Ω)@VGS=10V.
  • Ultra-low Gate charge(Typical 50nC).
  • Fast Switching Capability.
  • 100%Avalanche Tested.
  • Maximum Junction Temperature Range(150℃) WFF20N60 Silicon N-Channel MOSFET General.

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Datasheet Details

Part number WFF20N60
Manufacturer Winsemi
File Size 275.79 KB
Description Power MOSFET
Datasheet download datasheet WFF20N60 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Features � 20A,600V,RDS(on)(Max0.39Ω)@VGS=10V � Ultra-low Gate charge(Typical 50nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) WFF20N60 Silicon N-Channel MOSFET General Description This Power MOSFET is produced using Winsemi's advancedplanar s tripe,VDMOS technology.this latest technology has beenespecially designed to minimize on-state resistance, have a high rugged avalanche characteristics .