Description
This Power MOSFET is produced using Winsemi's advancedplanar s tripe,VDMOS technology.this latest technology has beenespecially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially w ellsuited for AC-DC switching power supplies, DC-DC powe
Features
- 20A,600V,RDS(on)(Max0.39Ω)@VGS=10V.
- Ultra-low Gate charge(Typical 50nC).
- Fast Switching Capability.
- 100%Avalanche Tested.
- Maximum Junction Temperature Range(150℃)
WFF20N60
Silicon N-Channel MOSFET
General.
WFF20N60 Datasheet
