WFF20N60 Description
This Power MOSFET is produced using Winsemi's advancedplanar s tripe,VDMOS technology.this latest technology has beenespecially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially w ellsuited for AC-DC switching power supplies, DC-DC powerConverters high voltage H-bridge motor drive PWM Ratings Symbol Parameter VDSS ID Drain Source Voltage Continuous...
WFF20N60 Key Features
- 20A,600V,RDS(on)(Max0.39Ω)@VGS=10V
- Ultra-low Gate charge(Typical 50nC)
- Fast Switching Capability
- 100%Avalanche Tested
- Maximum Junction Temperature Range(150℃)