WFF2N60 - Power MOSFET

Winsemi

General Description

This Power MOSFET is produced using Winsemi’s advanced planar stripe, VDMOS technology.

This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.

Key Features

2A,600V, RDS(on)(Max 5Ω)@VGS=10V.
Ultra-low Gate Charge(Typical 9.0nC).
Fast Switching Capability.
100%Avalanche Tested.
Isolation Voltage ( VISO = 4000V AC ).
Maximum Junction Temperature Range(150℃) General.

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WFF2N60 power mosfet by Winsemi - Datasheet Preview

Datasheet Details

Part number	WFF2N60
Manufacturer	Winsemi
File Size	391.59 KB
Description	Power MOSFET
Datasheet	WFF2N60 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WFF2N60 Silicon N-Channel MOSFET Features ■2A,600V, RDS(on)(Max 5Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 9.0nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Isolation Voltage ( VISO = 4000V AC ) ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’s advanced planar stripe, VDMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch mode power supply.