Winsemi WFF2N60
This Power MOSFET is produced using Winsemi’s advanced planar stripe, VDMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.| Part No. | WFF2N60 |
|---|---|
| Datasheet | WFF2N60 Download |
| Manufacturer |  Winsemi |
| Description | Power MOSFET |
| Buy | Stock & Price |
FEATURES
●2A,600V, RDS(on)(Max 5Ω)@VGS=10V● Ultra-low Gate Charge(Typical 9.0nC)
● Fast Switching Capability
● 100%Avalanche Tested
● Isolation Voltage ( VISO = 4000V AC )
● Maximum Junction Temperature Range(150℃)
GENERAL DESCRIPTION
This devices is specially well suited for high efficiency switch mode power supply.ABSOLUTE MAXIMUM RATINGS
Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TJ, Tstg TL Parameter Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@Tc=25℃) Derating Factor above 25℃ Junction and Storage Temperature C
