| Part Number | WFF2N60 Datasheet |
|---|---|
| Manufacturer | Winsemi |
| Overview |
This Power MOSFET is produced using Winsemi’s advanced planar stripe, VDMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanch.
*2A,600V, RDS(on)(Max 5Ω)@VGS=10V * Ultra-low Gate Charge(Typical 9.0nC) * Fast Switching Capability * 100%Avalanche Tested * Isolation Voltage ( VISO = 4000V AC ) * Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’s advanced planar stripe, VDM. |
WFF2N60 Datasheet and Specifications PDF
The WFF2N60 is a Power MOSFET.
| Part Number | WFF2N60 Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Wisdom technologies |
| Overview |
This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche .
* * RDS(on) (Max 5.0 Ω )@VGS=10V Gate Charge (Typical 9.5nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C) Symbol ◀ { 2. Drain * * * * 1. Gate { ▲ * * { 3. Source General Description This Power MOSFET is pr. |