WFF2N60B Datasheet PDF

Winsemi WFF2N60B

This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology. This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics.

Part No.	WFF2N60B
Datasheet	WFF2N60B Download
Manufacturer	Winsemi
Description	Power MOSFET
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DESCRIPTION

Silicon N-Channel MOSFET

FEATURES

2A,600V,RDS(on)(Max 5.0Ω)@VGS=10V Ultra-low Gate Charge(Typical 5.3nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃)

GENERAL DESCRIPTION

This devices is specially well suited for high efficiency switch mode power supply . D G S

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter VDSS ID Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) IDM Drain Current Pulsed VGS Gate to Source Voltage EAS Single Pulsed Avalanche Energy EAR Repetitive Avalanche Energy dv/dt Peak Diode Recovery dv /dt Total Power Dissipation(@Tc=25℃) PD Derating Factor above 25℃ TJ,Tstg Junction and Storage Temperature TL Cha