WFF2N65 Datasheet PDF

Winsemi WFF2N65

This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology. This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics.

Part No.	WFF2N65
Datasheet	WFF2N65 Download
Manufacturer	Winsemi
Description	Silicon N-Channel MOSFET
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FEATURES

2A,650V(Type),RDS(on)(Max 5Ω)@VGS=10V Ultra-low Gate Charge(Typical 9.0nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage(VISO=4000V AC) Maximum Junction Temperature Range(150℃) Halogen free(WFF2N65-HF) WFF2N65 Silicon N-Channel MOSFET

GENERAL DESCRIPTION

This devices is specially well suited for high efficiency switch mode power supply .

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter VDSS ID Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) IDM Drain Current Pulsed VGS Gate to Source Voltage EAS Single Pulsed Avalanche Energy EAR Repetitive Avalanche Energy dv/dt Peak Diode Recovery dv /dt Total Power Dissipation(@Tc=25℃) PD Derating Factor above 25℃ TJ,Ts