WFF2N65B Datasheet PDF

Winsemi WFF2N65B

This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology. This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics.

Part No.	WFF2N65B
Datasheet	WFF2N65B Download
Manufacturer	Winsemi
Description	Silicon N-Channel MOSFET
Buy	Stock & Price

FEATURES

2A,650V(Type),RDS(on)(Max 5Ω)@VGS=10V Ultra-low Gate Charge(Typical 9.0nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage(VISO=4000V AC) Maximum Junction Temperature Range(150℃) WFF2N65B Silicon N-Channel MOSFET

GENERAL DESCRIPTION

This devices is specially well suited for high efficiency switch mode power supply .

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter VDSS ID Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) IDM Drain Current Pulsed VGS Gate to Source Voltage EAS Single Pulsed Avalanche Energy EAR Repetitive Avalanche Energy dv/dt Peak Diode Recovery dv /dt Total Power Dissipation(@Tc=25℃) PD Derating Factor above 25℃ TJ,Tstg Junction and Storage Temperature TL Maximum lead Temperature for soldering purposes *Drain current limited by maximum junction temperature (Note1) (Note2) (Note1) (Note3) Value 650 2* 1.3* 16* ±30 240 10 4.5 20 0.26 -55~150 300 Units V A A A V mJ mJ V/ ns W W/℃ ℃ ℃ Thermal Characteristics Symb...