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WFF2N65B - Silicon N-Channel MOSFET

General Description

This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.

This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics.

Key Features

  • 2A,650V(Type),RDS(on)(Max 5Ω)@VGS=10V.
  • Ultra-low Gate Charge(Typical 9.0nC).
  • Fast Switching Capability.
  • 100%Avalanche Tested.
  • Isolation Voltage(VISO=4000V AC).
  • Maximum Junction Temperature Range(150℃) WFF2N65B Silicon N-Channel MOSFET General.

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Datasheet Details

Part number WFF2N65B
Manufacturer Winsemi
File Size 540.60 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet WFF2N65B Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Features � 2A,650V(Type),RDS(on)(Max 5Ω)@VGS=10V � Ultra-low Gate Charge(Typical 9.0nC) � Fast Switching Capability � 100%Avalanche Tested � Isolation Voltage(VISO=4000V AC) � Maximum Junction Temperature Range(150℃) WFF2N65B Silicon N-Channel MOSFET General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology. This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch mode power supply .