Datasheet4U Logo Datasheet4U.com

WFF2N65 - Silicon N-Channel MOSFET

General Description

This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.

This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics.

Key Features

  • 2A,650V(Type),RDS(on)(Max 5Ω)@VGS=10V.
  • Ultra-low Gate Charge(Typical 9.0nC).
  • Fast Switching Capability.
  • 100%Avalanche Tested.
  • Isolation Voltage(VISO=4000V AC).
  • Maximum Junction Temperature Range(150℃).
  • Halogen free(WFF2N65-HF) WFF2N65 Silicon N-Channel MOSFET General.

📥 Download Datasheet

Datasheet Details

Part number WFF2N65
Manufacturer Winsemi
File Size 745.74 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet WFF2N65 Datasheet

Full PDF Text Transcription for WFF2N65 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for WFF2N65. For precise diagrams, and layout, please refer to the original PDF.

Features � 2A,650V(Type),RDS(on)(Max 5Ω)@VGS=10V � Ultra-low Gate Charge(Typical 9.0nC) � Fast Switching Capability � 100%Avalanche Tested � Isolation Voltage(VISO=4000V ...

View more extracted text
hing Capability � 100%Avalanche Tested � Isolation Voltage(VISO=4000V AC) � Maximum Junction Temperature Range(150℃) � Halogen free(WFF2N65-HF) WFF2N65 Silicon N-Channel MOSFET General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology. This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch mode power supply .