Datasheet Details
| Part number | WFF4N60 |
|---|---|
| Manufacturer | Winsemi |
| File Size | 643.05 KB |
| Description | Silicon N-Channel MOSFET |
| Datasheet |
 WFF4N60 Datasheet
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General Description
This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.
This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics.
Key Features
- 4A,600V,RDS(on)(Max 2.5Ω)@VGS=10V.
- Ultra-low Gate Charge(Typical 16nC).
- Fast Switching Capability.
- 100%Avalanche Tested.
- Isolation Voltage(VISO=4000V AC).
- Maximum Junction Temperature Range(150℃) WFF4N60 Silicon N-Channel MOSFET General.
