| Part Number | WFF4N60 Datasheet |
|---|---|
| Manufacturer | Wisdom technologies |
| Overview |
This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche .
* * RDS(on) (Max 2.5 Ω )@VGS=10V Gate Charge (Typical 15nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C) Symbol ◀ { 2. Drain * * * * 1. Gate { ▲ * * { 3. Source General Description This Power MOSFET is pro. |
WFF4N60 Datasheet and Specifications PDF
The WFF4N60 is a N-Channel MOSFET.
| Part Number | WFF4N60 Datasheet |
|---|---|
| Description | Silicon N-Channel MOSFET |
| Manufacturer | Winsemi |
| Overview |
This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology. This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche.
* 4A,600V,RDS(on)(Max 2.5Ω)@VGS=10V * Ultra-low Gate Charge(Typical 16nC) * Fast Switching Capability * 100%Avalanche Tested * Isolation Voltage(VISO=4000V AC) * Maximum Junction Temperature Range(150℃) WFF4N60 Silicon N-Channel MOSFET General Description This Power MOSFET is produced using Winsem. |