WFF4N60
Overview
This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
- RDS(on) (Max 2.5 Ω )@VGS=10V Gate Charge (Typical 15nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C) Symbol ◀ {
- Drain * * * *
- Gate { ▲ *
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