WFF4N65L - Silicon N-Channel MOSFET

Winsemi

General Description

Silicon N-Channel MOSFET

Key Features

4.0A,650V,RDS(on)(Max2.5Ω)@VGS=10V.
Low Crss (typical 3.62pF ).
Fast switching.
100% avalanche tested.
Improved dv/dt capability.
Maximum Junction Temperature Range(150℃) General.

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WFF4N65L silicon n-channel mosfet by Winsemi - Datasheet Preview

Datasheet Details

Part number	WFF4N65L
Manufacturer	Winsemi
File Size	459.68 KB
Description	Silicon N-Channel MOSFET
Datasheet	WFF4N65L Datasheet

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WFF4N65L Product Description Silicon N-Channel MOSFET Features � 4.0A,650V,RDS(on)(Max2.5Ω)@VGS=10V � Low Crss (typical 3.62pF ) � Fast switching � 100% avalanche tested � Improved dv/dt capability � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially well suited for half bridge and full bridge resonant topology line a electronic lamp ballast, high efficiency switched mode power supplies, active power factor correction.