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WFF4N65S - 650V Super-Junction Power MOSFET

General Description

650V Super-Junction Power MOSFET

Key Features

  • Ultra low Rdson.
  • Ultra low gate charge (typ. Qg =13nC).
  • 100% UIS tested.
  • RoHS compliant General.

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Datasheet Details

Part number WFF4N65S
Manufacturer Winsemi
File Size 149.76 KB
Description 650V Super-Junction Power MOSFET
Datasheet download datasheet WFF4N65S Datasheet

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WFF4N65S Product Description 650V Super-Junction Power MOSFET Features � Ultra low Rdson � Ultra low gate charge (typ. Qg =13nC) � 100% UIS tested � RoHS compliant General Description Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency.