Datasheet Summary
Features
- 4A,600V,RDS(on)(Max 2.5Ω)@VGS=10V
- Ultra-low Gate Charge(Typical 16nC)
- Fast Switching Capability
- 100%Avalanche Tested
- Isolation Voltage(VISO=4000V AC)
- Maximum Junction Temperature Range(150℃)
Silicon N-Channel MOSFET
General Description
This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology. This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics. This devices is specially well suited for half bridge and full bridge resonant topology line a electronic lamp...
