FEATURES
4A,600V,RDS(on)(Max 2.5Ω)@VGS=10V Ultra-low Gate Charge(Typical 16nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage(VISO=4000V AC) Maximum Junction Temperature Range(150℃) WFF4N60 Silicon N-Channel MOSFET GENERAL DESCRIPTION
This devices is specially well suited for half bridge and full bridge resonant topology line a electronic lamp ballast. ABSOLUTE MAXIMUM RATINGS
Symbol Parameter VDSS ID Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) IDM Drain Current Pulsed VGS Gate to Source Voltage EAS Single Pulsed Avalanche Energy EAR Repetitive Avalanche Energy dv/dt Peak Diode Recovery dv /dt Total Power Dissipation(@Tc=25℃) PD Derating Factor above 25℃ TJ,T
Winsemi
