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WFF4N60 Datasheet Silicon N-channel MOSFET

Manufacturer: Winsemi

Datasheet Details

Part number WFF4N60
Manufacturer Winsemi
File Size 643.05 KB
Description Silicon N-Channel MOSFET
Datasheet WFF4N60-Winsemi.pdf

General Description

This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.

This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics.

This devices is specially well suited for half bridge and full bridge resonant topology line a electronic lamp ballast.

Key Features

  • 4A,600V,RDS(on)(Max 2.5Ω)@VGS=10V.
  • Ultra-low Gate Charge(Typical 16nC).
  • Fast Switching Capability.
  • 100%Avalanche Tested.
  • Isolation Voltage(VISO=4000V AC).
  • Maximum Junction Temperature Range(150℃) WFF4N60 Silicon N-Channel MOSFET General.

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