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WFN1N60 Datasheet Silicon N-Channel MOSFET

Manufacturer: Winsemi

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Datasheet Details

Part number WFN1N60
Manufacturer Winsemi
File Size 464.61 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet WFN1N60 Datasheet

General Description

Th is Power MO SFET is produced using Winse mi’s advan ced planar stripe, VDMOS technology.

This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.

This devices is specially well suited for high efficiency switch mode power supply.

Overview

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Key Features

  • 1.3A,600V, RDS(on)(Max8.5Ω)@VGS=10V Ultra-low Gate charge(Typical 9.1nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃) General.

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