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WFN1N60 - N-Channel MOSFET

Features

  • Low Intrinsic Capacitances .
  • Excellent Switching Characteristics .
  • Extended Safe Operating Area .
  • Unrivalled Gate Charge :Qg= 10nC (Typ. ).
  • BVDSS=600V,ID=1A.
  • RDS(on) : 8 Ω (Max) @VG=10V.
  • 100% Avalanche Tested D ! G!.
  • ◀▲.
  • ! S       TO-92 G‐Gate,D‐Drain,S‐Sourse    Absolute Maximum Ratings Tc=25℃ unless other wise noted Symbol VDSS ID VGS EAS IAR PD TJ,TSTG TL Parameter Drain-Sourse Voltage Drain Current -co.

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Datasheet preview – WFN1N60

Datasheet Details

Part number WFN1N60
Manufacturer Wisdom technologies
File Size 886.73 KB
Description N-Channel MOSFET
Datasheet download datasheet WFN1N60 Datasheet
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Full PDF Text Transcription

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HIGH VOLTAGE N-Channel MOSFET      WFN1 N60 600V N-Channel MOSFET Features □ Low Intrinsic Capacitances  □ Excellent Switching Characteristics  □ Extended Safe Operating Area  □ Unrivalled Gate Charge :Qg= 10nC (Typ.
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