WFN1N60 Datasheet PDF

FEATURES

□ Low Intrinsic Capacitances □ Excellent Switching Characteristics □ Extended Safe Operating Area □ Unrivalled Gate Charge :Qg= 10nC (Typ.) □ BVDSS=600V,ID=1A □ RDS(on) : 8 Ω (Max) @VG=10V □ 100% Avalanche Tested D ! G!
● ◀▲
●
● ! S TO-92 G‐Gate,D‐Drain,S‐Sourse

ABSOLUTE MAXIMUM RATINGS

Tc=25℃ unless other wise noted Symbol VDSS ID VGS EAS IAR PD TJ,TSTG TL Parameter Drain-Sourse Voltage Drain Current -continuous (Tc=25℃) -continuous (Tc=100℃) Gate-Sourse Voltage Single Plused Avanche Energy (Note1) Avalanche Current (Note2) Power Dissipation (Tc=25℃) Operating and Storage Temperature Range Maximum lead temperature for soldering purpose,1/8” from case for 5 seconds WFN1 N60 600 1* 0.63* ±30 25 1 23 -55 ~ +150 300 Thermal Characteristics Symbol Parameter RθJC Thermal Resistance,Junction to Case -- RθJA Thermal Resist