WFN1N60 Description
HIGH VOLTAGE N-Channel MOSFET WFN1 N60 600V N-Channel MOSFET.
WFN1N60 Key Features
- Low Intrinsic Capacitances
- Excellent Switching Characteristics
- Extended Safe Operating Area
- Unrivalled Gate Charge :Qg= 10nC (Typ.)
- BVDSS=600V,ID=1A
- RDS(on) : 8 Ω (Max) @VG=10V
- 100% Avalanche Tested