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WFN1N60N - Silicon N-Channel MOSFET

Description

Th is Power MO SFET is pro du ced using Winsemi ’s ad van ced planar stripe, VDMOS technology.

This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.

Features

  • 0.5A,600V,RDS(on)(Max15.0Ω)@VGS=10V.
  • Ultra-low Gate Charge(Typical 6.1nC).
  • Fast Switching Capability.
  • 100%Avalanche Tested.
  • Maximum Junction Temperature Range(150℃) General.

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Datasheet preview – WFN1N60N

Datasheet Details

Part number WFN1N60N
Manufacturer Winsemi
File Size 735.31 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet WFN1N60N Datasheet
Additional preview pages of the WFN1N60N datasheet.

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Full PDF Text Transcription

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Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr N1N6 0N WF WFN 1N60 Silicon N-Ch annel MOS FET Cha OSF Features ■0.5A,600V,RDS(on)(Max15.0Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 6.1nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description Th is Power MO SFET is pro du ced using Winsemi ’s ad van ced planar stripe, VDMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch mode power supply. electronic Lamp ballasts based on half bridge and UPS.
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