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N1N6 0N WF WFN 1N60
Silicon N-Ch annel MOS FET Cha OSF
Features
- 0.5A,600V,RDS(on)(Max15.0Ω)@VGS=10V
- Ultra-low Gate Charge(Typical 6.1nC)
- Fast Switching Capability
- 100%Avalanche Tested
- Maximum Junction Temperature Range(150℃)
General Description
Th is Power MO SFET is pro du ced using Winsemi ’s ad van ced planar stripe, VDMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch mode power supply. electronic Lamp ballasts based on half bridge and UPS.
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