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WFN1N60C - Power MOSFET

Description

Th is Power MO SFET is produced using Winse mi’s advan ced planar stripe, VDMOS technology.

This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.

Features

  • 1.2A,600V, RDS(on)(Max8.5Ω)@VGS=10V.
  • Ultra-low Gate charge(Typical 9.1nC).
  • Fast Switching Capability.
  • 100%Avalanche Tested.
  • Maximum Junction Temperature Range(150℃) WFN1N60C Silicon N-Channel MOSFET General.

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Datasheet preview – WFN1N60C

Datasheet Details

Part number WFN1N60C
Manufacturer Winsemi
File Size 417.53 KB
Description Power MOSFET
Datasheet download datasheet WFN1N60C Datasheet
Additional preview pages of the WFN1N60C datasheet.

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Full PDF Text Transcription

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Features � 1.2A,600V, RDS(on)(Max8.5Ω)@VGS=10V � Ultra-low Gate charge(Typical 9.1nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) WFN1N60C Silicon N-Channel MOSFET General Description Th is Power MO SFET is produced using Winse mi’s advan ced planar stripe, VDMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch mode power supply. electronic Lamp ballasts based on half bridge and UPS.
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