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WFN1N60C Datasheet Power MOSFET

Manufacturer: Winsemi

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Datasheet Details

Part number WFN1N60C
Manufacturer Winsemi
File Size 417.53 KB
Description Power MOSFET
Datasheet download datasheet WFN1N60C Datasheet

General Description

Th is Power MO SFET is produced using Winse mi’s advan ced planar stripe, VDMOS technology.

This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.

This devices is specially well suited for high efficiency switch mode power supply.

Key Features

  • 1.2A,600V, RDS(on)(Max8.5Ω)@VGS=10V.
  • Ultra-low Gate charge(Typical 9.1nC).
  • Fast Switching Capability.
  • 100%Avalanche Tested.
  • Maximum Junction Temperature Range(150℃) WFN1N60C Silicon N-Channel MOSFET General.

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