Datasheet Summary
Features
- 1.2A,600V, RDS(on)(Max8.5Ω)@VGS=10V
- Ultra-low Gate charge(Typical 9.1nC)
- Fast Switching Capability
- 100%Avalanche Tested
- Maximum Junction Temperature Range(150℃)
Silicon N-Channel MOSFET
General Description
Th is Power MO SFET is produced using Winse mi’s advan ced planar stripe, VDMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch mode power supply. electronic Lamp ballasts based on half bridge and...
