WFN1N60N Key Features
- 0.5A,600V,RDS(on)(Max15.0Ω)@VGS=10V
- Ultra-low Gate Charge(Typical 6.1nC)
- Fast Switching Capability
- 100%Avalanche Tested
- Maximum Junction Temperature Range(150℃)
- Part: WFN1N60N
- Manufacturer: Winsemi
- Size: 735.31 KB
Other WFN1N60N Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Wisdom technologies |
WFN1N60 | N-Channel MOSFET |
WFN1N60N Description
Th is Power MO SFET is pro du ced using Winsemi ’s ad van ced planar stripe, VDMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch mode power supply.