WFN1N60NC - Silicon N-Channel MOSFET

Winsemi

General Description

This Power MOSFET is produced using Winsemi’s advanced planar stripe, VDMOS technology.

This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.

Key Features

0.5A,600V,RDS(on)(Max15.0Ω)@VGS=10V.
Ultra-low Gate Charge(Typical 6.1nC).
Fast Switching Capability.
100%Avalanche Tested.
Maximum Junction Temperature Range(150℃) General.

📥 Download Datasheet

WFN1N60NC silicon n-channel mosfet by Winsemi - Datasheet Preview

Datasheet Details

Part number	WFN1N60NC
Manufacturer	Winsemi
File Size	673.59 KB
Description	Silicon N-Channel MOSFET
Datasheet	WFN1N60NC Datasheet

Full PDF Text Transcription for WFN1N60NC (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for WFN1N60NC. For precise diagrams, and layout, please refer to the original PDF.

WFN1N60NC Silicon N-Channel MOSFET Features ■0.5A,600V,RDS(on)(Max15.0Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 6.1nC) ■ Fast Switching Capability ■ 100%Avalanche Tested...

View more extracted text

arge(Typical 6.1nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’s advanced planar stripe, VDMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch mode power supply. electronic Lamp ballasts based on half bridge and UPS.

📁 Similar Datasheet

Brand Logo	Part Number	Description	Manufacturer
	WFN1N60	N-Channel MOSFET	Wisdom technologies

More Datasheets from Winsemi

Part Number	Description
WFN1N60N	Silicon N-Channel MOSFET
WFN1N60	Silicon N-Channel MOSFET
WFN1N60C	Power MOSFET