WFP13N50 - Silicon N-Channel MOSFET

Winsemi

General Description

This Power MOSFET is produced using Winsemi’s trench layout-based process.This technology improves the performances compared with standard parts from various sources.

Key Features

13A,500V, RDS(on)(Max0.46Ω)@VGS=10V.
Ultra-low Gate charge(Typical 43nC).
Fast Switching Capability.
100%Avalanche Tested.
Maximum Junction Temperature Range(150℃) WFP13N50 Silicon N-Channel MOSFET General.

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WFP13N50 silicon n-channel mosfet by Winsemi - Datasheet Preview

Datasheet Details

Part number	WFP13N50
Manufacturer	Winsemi
File Size	562.93 KB
Description	Silicon N-Channel MOSFET
Datasheet	WFP13N50 Datasheet

Full PDF Text Transcription for WFP13N50 (Reference)

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Features � 13A,500V, RDS(on)(Max0.46Ω)@VGS=10V � Ultra-low Gate charge(Typical 43nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Ran...

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g Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) WFP13N50 Silicon N-Channel MOSFET General Description This Power MOSFET is produced using Winsemi’s trench layout-based process.This technology improves the performances compared with standard parts from various sources. All of these power MOSFETs are designed for applications in switching regulators, switching convertors, motor and relay drivers, and drivers for high power bipolar switching transistors demanding high speed and low gate drive power.

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