WFP13N50C - Silicon N-Channel MOSFET

Winsemi

General Description

Silicon N-Channel MOSFET

Key Features

13A,500V, RDS(on)(Max0.49Ω)@VGS=10V.
Ultra-low Gate charge(Typical 37nC).
Fast Switching Capability.
100%Avalanche Tested.
Maximum Junction Temperature Range(150℃) General.

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WFP13N50C silicon n-channel mosfet by Winsemi - Datasheet Preview

Datasheet Details

Part number	WFP13N50C
Manufacturer	Winsemi
File Size	213.89 KB
Description	Silicon N-Channel MOSFET
Datasheet	WFP13N50C Datasheet

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Full PDF Text Transcription (Reference)

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WFP13N50C Product Description Silicon N-Channel MOSFET Features � 13A,500V, RDS(on)(Max0.49Ω)@VGS=10V � Ultra-low Gate charge(Typical 37nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’s trench layout-based process.This technology improves the performances compared with standard parts from various sources. All of these power MOSFETs are designed for applications in switching regulators, switching convertors, motor and relay drivers, and drivers for high power bipolar switching transistors demanding high speed and low gate drive power.