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WFP13N50 - Silicon N-Channel MOSFET

General Description

This Power MOSFET is produced using Winsemi’s trench layout-based process.This technology improves the performances compared with standard parts from various sources.

Key Features

  • 13A,500V, RDS(on)(Max0.46Ω)@VGS=10V.
  • Ultra-low Gate charge(Typical 43nC).
  • Fast Switching Capability.
  • 100%Avalanche Tested.
  • Maximum Junction Temperature Range(150℃) WFP13N50 Silicon N-Channel MOSFET General.

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Datasheet Details

Part number WFP13N50
Manufacturer Winsemi
File Size 562.93 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet WFP13N50 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Features � 13A,500V, RDS(on)(Max0.46Ω)@VGS=10V � Ultra-low Gate charge(Typical 43nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) WFP13N50 Silicon N-Channel MOSFET General Description This Power MOSFET is produced using Winsemi’s trench layout-based process.This technology improves the performances compared with standard parts from various sources. All of these power MOSFETs are designed for applications in switching regulators, switching convertors, motor and relay drivers, and drivers for high power bipolar switching transistors demanding high speed and low gate drive power.