WFP18N50 Description
This Power MOSFET is produced using Winsemi's advancedplanar stripe,VDMOS technology.this latest technology has beenespecially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially wellsuited for AC-DC switching power supplies, DC-DC powerConverters high voltage H-bridge motor drive PWM Ratings Symbol Parameter VDSS ID Drain Source Voltage Continuous Drain...
WFP18N50 Key Features
- 18A,500V,RDS(on)(Max0.27Ω)@VGS=10V
- Ultra-low Gate charge(Typical 42nC)
- Fast Switching Capability
- 100%Avalanche Tested
- Maximum Junction Temperature Range(150℃)