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WFP18N50 Datasheet Silicon N-channel MOSFET

Manufacturer: Winsemi

Datasheet Details

Part number WFP18N50
Manufacturer Winsemi
File Size 615.55 KB
Description Silicon N-Channel MOSFET
Datasheet WFP18N50-Winsemi.pdf

General Description

This Power MOSFET is produced using Winsemi's advancedplanar stripe,VDMOS technology.this latest technology has beenespecially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially wellsuited for AC-DC switching power supplies, DC-DC powerConverters high voltage H-bridge motor drive PWM Absolute Maximum Ratings Symbol Parameter VDSS ID Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) IDM Drain Current Pulsed VGS Gate to Source Voltage EAS Single Pulsed Avalanche Energy EAR Repetitive Avalanche Energy dv/dt Peak Diode Recovery dv /dt Total Power Dissipation(@Tc=25℃) PD Derating Factor above 25℃ TJ,Tstg Junction and Storage

Key Features

  • 18A,500V,RDS(on)(Max0.27Ω)@VGS=10V.
  • Ultra-low Gate charge(Typical 42nC).
  • Fast Switching Capability.
  • 100%Avalanche Tested.
  • Maximum Junction Temperature Range(150℃) WFP18N50 Silicon N-Channel MOSFET General.

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