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WFP18N50 - Silicon N-Channel MOSFET

General Description

This Power MOSFET is produced using Winsemi's advancedplanar stripe,VDMOS technology.this latest technology has beenespecially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially wellsuited for AC-DC switching power supplies, DC-DC powerC

Key Features

  • 18A,500V,RDS(on)(Max0.27Ω)@VGS=10V.
  • Ultra-low Gate charge(Typical 42nC).
  • Fast Switching Capability.
  • 100%Avalanche Tested.
  • Maximum Junction Temperature Range(150℃) WFP18N50 Silicon N-Channel MOSFET General.

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Datasheet Details

Part number WFP18N50
Manufacturer Winsemi
File Size 615.55 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet WFP18N50 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Features � 18A,500V,RDS(on)(Max0.27Ω)@VGS=10V � Ultra-low Gate charge(Typical 42nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) WFP18N50 Silicon N-Channel MOSFET General Description This Power MOSFET is produced using Winsemi's advancedplanar stripe,VDMOS technology.this latest technology has beenespecially designed to minimize on-state resistance, have a high rugged avalanche characteristics .