WFP18N50 - Silicon N-Channel MOSFET

Product Overview

Winsemi

Datasheet Details

Part number	WFP18N50
Manufacturer	Winsemi
File Size	615.55 KB
Description	Silicon N-Channel MOSFET
Datasheet	WFP18N50 Datasheet
Additional preview pages of the WFP18N50 datasheet.

Product details

Description

This Power MOSFET is produced using Winsemi's advancedplanar stripe,VDMOS technology.this latest technology has beenespecially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially wellsuited for AC-DC switching power supplies, DC-DC powerConverters high voltage H-bridge motor drive PWM Absolute Maximum Ratings Symbol Parameter VDSS ID Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) IDM Dr

Features

18A,500V,RDS(on)(Max0.27Ω)@VGS=10V.
Ultra-low Gate charge(Typical 42nC).
Fast Switching Capability.
100%Avalanche Tested.
Maximum Junction Temperature Range(150℃) WFP18N50 Silicon N-Channel MOSFET General.

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Published: Mar 22, 2017 |